A bulk silicon micromachining technique using porous silicon as a sacrificial layer is developed. The proposed process is fully C-MOS compatible and it was successfully used to fabricate deep cavities into silicon with very smooth bottom surfaces and sidewalls. Suspended fiat polysilicon membranes w
β¦ LIBER β¦
Porous silicon as a sacrificial material
β Scribed by Bell, T E; Gennissen, P T J; DeMunter, D; Kuhl, M
- Book ID
- 120196520
- Publisher
- Institute of Physics
- Year
- 1996
- Tongue
- English
- Weight
- 787 KB
- Volume
- 6
- Category
- Article
- ISSN
- 0960-1317
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