๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Polymer field-effect transistor gated via a poly(styrenesulfonic acid) thin film

โœ Scribed by Said, Elias; Crispin, Xavier; Herlogsson, Lars; Elhag, Sami; Robinson, Nathaniel D.; Berggren, Magnus


Book ID
120935160
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
318 KB
Volume
89
Category
Article
ISSN
0003-6951

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


MIS field effect transistor with barium
โœ P. Firek; A. Werbowy; J. Szmidt ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 1000 KB

The properties of barium titanate (BaTiO 3 , BT) like, e.g. high dielectric constant and resistivity, allow it to find numerous applications in field of microelectronics. In this work silicon metal insulator semiconductor field effect transistor (MISFET) structures with BaTiO 3 (containing La 2 O 3