A gas-sensitive field effect transistor utilizing a thin film of lead phthalocyanine as the gate material

✍ Scribed by P.M. Burr; P.D. Jeffery; J.D. Benjamin; M.J. Uren

• Publisher: Elsevier Science
• Year: 1987
• Tongue: English
• Weight: 155 KB
• Volume: 151
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/0040-6090(87)90017-4