MIS field effect transistor with barium titanate thin film as a gate insulator

✍ Scribed by P. Firek; A. Werbowy; J. Szmidt

• Book ID: 104063878
• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 1000 KB
• Volume: 165
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/j.mseb.2009.02.018

✦ Synopsis

The properties of barium titanate (BaTiO 3 , BT) like, e.g. high dielectric constant and resistivity, allow it to find numerous applications in field of microelectronics. In this work silicon metal insulator semiconductor field effect transistor (MISFET) structures with BaTiO 3 (containing La 2 O 3 admixture) thin films in a role of gate insulator were investigated. The films were produced by means of radio frequency plasma sputtering (RF PS) of sintered BaTiO 3 + La 2 O 3 (2 wt.%) target. In the paper transfer and output current-voltage (I-V), transconductance and output conductance characteristics of obtained transistors are presented and discussed. Basic parameters of these devices like, e.g. threshold voltage (V TH ), are determined and discussed.