𝔖 Bobbio Scriptorium
✦   LIBER   ✦

A high-performance polycrystalline silicon thin film transistor with a silicon nitride gate insulator

✍ Scribed by Lee, K.H.; Park, J.K.; Jin Jang


Book ID
114537507
Publisher
IEEE
Year
1998
Tongue
English
Weight
106 KB
Volume
45
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Plasma enhanced chemical vapor deposited
✍ Yue Kuo πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 400 KB

Plasma enhanced chemical vapor deposited (PECVD) silicon nitride (SiN x ) is the dominate gate dielectric material for the amorphous silicon (a-Si:H) thin film transistors (TFTs) today. In this paper, the author critically reviewed several major issues in this field. Two subjects are included in the