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Poly(alkenylsilane sulfone)s as positive electron beam resists for two-layer systems

โœ Scribed by Antoni S. Gozdz; Harold G. Craighead; Murrak J. Bowdkn


Publisher
Society for Plastic Engineers
Year
1986
Tongue
English
Weight
822 KB
Volume
26
Category
Article
ISSN
0032-3888

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This paper shows a simple approach to simulating the electron-beam lithography for sub-0.2 mm T-gate fabrication. Both the proximity parameters and the solubility rates of resists are experimentally determined. The simulation assumes that resists are removed at rates that are only governed by the lo