✦ LIBER ✦
Simple simulation of electron-beam lithography for fabricating sub-0.2 μm T-shaped gates based on a two-layer resist system
✍ Scribed by D Xu
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 629 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
This paper shows a simple approach to simulating the electron-beam lithography for sub-0.2 mm T-gate fabrication. Both the proximity parameters and the solubility rates of resists are experimentally determined. The simulation assumes that resists are removed at rates that are only governed by the local exposure doses. This simplified assumption produces a resist profile evolution that is quite consistent with scanning electron microscope (SEM) observation. Together with corrections from the SEM, the fabricated gate length can be predicted within an error of less than 15% for gate lengths from 0.1 through 0.