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Poly-silicon quantum-dot single-electron transistors

✍ Scribed by Kwon-Chil Kang; Joung-Eob Lee; Jung-Han Lee; Jong-Ho Lee; Hyungcheol Shin; Byung-Gook Park


Book ID
119991402
Publisher
The Korean Physical Society
Year
2012
Tongue
English
Weight
274 KB
Volume
60
Category
Article
ISSN
0374-4884

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We report, in this paper, the detailed measurements obtained from the double quantum dot silicon single electron transistors. Both the drain current and the differential conductance measurements in large drain voltage regime show small conductance peaks-as many as seven. The differential conductance