We have fabricated silicon quantum dot devices based on a dual gate technique. Two lateral gates deplete the inversion layer which is induced by a top gate, thus forming a quantum dot located between the source and drain of a long channel MOSFET. Lithographic dimensions of the dots ranged from 40 nm
β¦ LIBER β¦
Quantum mechanical effects in the silicon quantum dot in a single-electron transistor
β Scribed by Ishikuro, Hiroki; Hiramoto, Toshiro
- Book ID
- 111890116
- Publisher
- American Institute of Physics
- Year
- 1997
- Tongue
- English
- Weight
- 369 KB
- Volume
- 71
- Category
- Article
- ISSN
- 0003-6951
- DOI
- 10.1063/1.120483
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