✦ LIBER ✦

Single-electron quantum dots in silicon MOS structures

✍ Scribed by M. Khoury; A. Gunther; S. Miličić; J. Rack; S.M. Goodnick; D. Vasileska; T.J. Thornton; D.K. Ferry

Publisher: Springer
Year: 2000
Tongue: English
Weight: 238 KB
Volume: 71
Category: Article
ISSN: 1432-0630
DOI: 10.1007/s003390000554

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Single electron effects in silicon quant

Single electron effects in silicon quantum dots in a MOSFET structure

✍ M. Khoury; A. Gunther; M.J. Rack; D.P. Pivin Jr.; D.K. Ferry 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 319 KB

We have fabricated silicon quantum dot devices based on a dual gate technique. Two lateral gates deplete the inversion layer which is induced by a top gate, thus forming a quantum dot located between the source and drain of a long channel MOSFET. Lithographic dimensions of the dots ranged from 40 nm

Electron–electron correlation in silicon

Electron–electron correlation in silicon anisotropic quantum dots

✍ Cantele, G. ;Ninno, D. ;Iadonisi, G. 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 97 KB

Single-electron polarization of an isola

Single-electron polarization of an isolated double quantum dot in silicon

✍ E.G. Emiroglu; D.G. Hasko; D.A. Williams 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 266 KB

Electronic states in silicon quantum dot

Electronic states in silicon quantum dot devices

✍ Y. Hada; M. Eto 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 150 KB

Single-electron transistors with quantum

Single-electron transistors with quantum dots

✍ R.J. Haug; M. Dilger; T. Schmidt; R.H. Blick; K.v. Klitzing; K. Eberl 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 396 KB

Single electron charging in parallel cou

Single electron charging in parallel coupled quantum dots

✍ A.S. Adourian; C. Livermore; R.M. Westervelt; K.L. Campman; A.C. Gossard 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 361 KB

We report low-temperature conductance measurements in the Coulomb blockade regime on two nominally identical tunnel-coupled quantum dots in parallel defined electrostatically in the two-dimensional electron gas of a GaAs/AlGaAs heterostructure. At low interdot tunnel coupling we find that the conduc