Single-electron polarization of an isolated double quantum dot in silicon
β Scribed by E.G. Emiroglu; D.G. Hasko; D.A. Williams
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 266 KB
- Volume
- 73-74
- Category
- Article
- ISSN
- 0167-9317
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
We report, in this paper, the detailed measurements obtained from the double quantum dot silicon single electron transistors. Both the drain current and the differential conductance measurements in large drain voltage regime show small conductance peaks-as many as seven. The differential conductance
Electron energy relaxation in the asymmetric double quantum dot system is calculated numerically, using the material parameters of GaAs. The double dot, sharing a single electron, consists of two tunneling coupled quantum dots each having a single nondegenerate electronic orbital. The intra-dot mult
We have fabricated silicon quantum dot devices based on a dual gate technique. Two lateral gates deplete the inversion layer which is induced by a top gate, thus forming a quantum dot located between the source and drain of a long channel MOSFET. Lithographic dimensions of the dots ranged from 40 nm