Relaxation of electron energy in polar semiconductor double quantum dot

✍ Scribed by K Král; Z Khás; P Zdeněk; M Čerňanský; C.Y Lin

• Publisher: Elsevier Science
• Year: 2002
• Tongue: English
• Weight: 62 KB
• Volume: 12
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(01)00467-2

✦ Synopsis

Electron energy relaxation in the asymmetric double quantum dot system is calculated numerically, using the material parameters of GaAs. The double dot, sharing a single electron, consists of two tunneling coupled quantum dots each having a single nondegenerate electronic orbital. The intra-dot multiple scattering of the single electron on the longitudinal optical phonons is assumed. The inter-dot interaction is provided by the electronic tunneling mechanism. The dependence of the relaxation rate on the thickness of the tunneling barrier, on the temperature, and on the electron energy-level separation, is calculated.