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Point defects in neutron-transmutation-doped Czochralski-grown Si studied by positron annihilation

✍ Scribed by X.T. Meng; A.K. Liolios; M. Chardalas; Sp. Dedoussis; C.A. Eleftheriadis; Staf. Charalambous

No coin nor oath required. For personal study only.

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