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Plasma process induced damages on n-MOSFET with plasma oxidized and nitrided gate dielectrics

โœ Scribed by T.S. Jang; M.H. Ha; K.D. Yoo; B.K. Kang


Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
443 KB
Volume
75
Category
Article
ISSN
0167-9317

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Improved electrical characteristics and
โœ Chung-Hao Fu; Kuei-Shu Chang-Liao; Wei-Hao Tseng; Chun-Chang Lu; Tien-Ko Wang; W ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 770 KB

MOSFET devices with Ge channel and nitridation treatment using plasma immersion ion implantation (PIII) are studied in this work. Experimental results show that the electrical characteristics and reliability of Ge MOSFETs can be significantly improved by PIII nitridation. For instance, the mobility