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Plasma polymerization of organosilicon compounds

✍ Scribed by N. Inagaki; S. Kondo; M. Hirata; H. Urushibata


Publisher
John Wiley and Sons
Year
1985
Tongue
English
Weight
588 KB
Volume
30
Category
Article
ISSN
0021-8995

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In this study, dimethylchlorosilane diluted by hydrogen is used as the raw material, and silicon carbide crystals are grown on a silicon substrate at low temperature (< 500 Β°C) by the triode plasma CVD method. The plasma parameters, such as the electron temperature and the space potential in the spa