✦ LIBER ✦

Plasma polymerization of CF4 + H2 mixtures on the surface of polyethylene and polyvinylidene flouride substrates

✍ Scribed by P. Montazer Rahmati; F. Arefi; J. Amouroux

Book ID: 107930162
Publisher: Elsevier Science
Year: 1991
Tongue: English
Weight: 418 KB
Volume: 45
Category: Article
ISSN: 0257-8972
DOI: 10.1016/0257-8972(91)90244-q

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effect of H[sub 2] addition on surface r

Effect of H[sub 2] addition on surface reactions during CF[sub 4]/H[sub 2] plasma etching of silicon and silicon dioxide films

✍ Marra, Denise C. 📂 Article 📅 1997 🏛 AVS (American Vacuum Society) 🌐 English ⚖ 520 KB

Preparation and characteristics of thin

Preparation and characteristics of thin film with wear-resistant behavior on HDPE surface polymerized by C2H2–H2–SiH4 plasma

✍ Xiangping Zou; Xiaosu Yi; Zhenkui Fang 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 193 KB 👁 2 views

Plasma-polymerized deposition of an acetylene-hydrogen-silane mixture (C 2 H 2 -H 2 -SiH 4 ) to obtain thin film with good wear behavior on a high-density polyethylene (HDPE) surface was present in this work. It was found that the bond between thin film and HDPE substrate was excellent and H 2 gas i

Effects of substrate bias power on the s

Effects of substrate bias power on the surface of ITO electrodes during O2/CF4plasma treatment and the resulting performance of organic light-emitting diodes

✍ D. M. Han; J. H. Lee; K. H. Jeong; J. G. Lee 📂 Article 📅 2010 🏛 TechnoPress 🌐 English ⚖ 494 KB

On the application of XPS, SSIMS and QCM

On the application of XPS, SSIMS and QCM to study the surface of a CF4/O2 plasma treated polycarbonate

✍ E. Occhiello; M. Morra; F. Gardassi; J. Bargon 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 553 KB

Ion and substrate effects on surface rea

Ion and substrate effects on surface reactions of CF[sub 2] using C[sub 2]F[sub 6], C[sub 2]F[sub 6]/H[sub 2], and hexafluoropropylene oxide plasmas

✍ Butoi, Carmen I.; Mackie, Neil M.; Williams, Keri L.; Capps, Nathan E.; Fisher, 📂 Article 📅 2000 🏛 AVS (American Vacuum Society) 🌐 English ⚖ 621 KB

Influence of the additives argon, O2, C4

Influence of the additives argon, O2, C4F8, H2, N2 and CO on plasma conditions and process results during the etch of SiCOH in CF4 plasma

✍ S. Zimmermann; N. Ahner; F. Blaschta; M. Schaller; H. Zimmermann; H. Rülke; N. L 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 648 KB

Reactive ion etch processes for modern interlevel dielectrics become more and more complex, especially for further scaling of interconnect dimensions. The materials will be damaged within such processes with the result of an increase in their dielectric constants. The capability of selected additive