𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Plasma nitrided oxide films as a thin gate dielectric

✍ Scribed by P. Debenest; K. Barla; A. Straboni; B. Vuillermoz

Book ID
107925804
Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
440 KB
Volume
36
Category
Article
ISSN
0169-4332

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Plasma nitridation of very thin gate die
Plasma nitridation of very thin gate dielectrics
✍ H.N Al-Shareef; G Bersuker; C Lim; R Murto; S Borthakur; G.A Brown; H.R Huff πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 352 KB

The performance of NMOSFET devices with nitrided gate oxides has been compared using two plasma-based nitridation techniques. Specifically, remote plasma nitridation (RPN) and decoupled plasma nitridation (DPN) of 1.4 nm base oxides were evaluated. It is found that both nitridation techniques give c

Plasma enhanced chemical vapor deposited
Plasma enhanced chemical vapor deposited silicon nitride as a gate dielectric film for amorphous silicon thin film transistorsβ€”a critical review
✍ Yue Kuo πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 400 KB

Plasma enhanced chemical vapor deposited (PECVD) silicon nitride (SiN x ) is the dominate gate dielectric material for the amorphous silicon (a-Si:H) thin film transistors (TFTs) today. In this paper, the author critically reviewed several major issues in this field. Two subjects are included in the