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Plasma-deposited silicon nitride films with low hydrogen content for amorphous silicon thin-film transistors application

✍ Scribed by J. Campmany; J.L. Andújar; A. Canillas; J. Cifre; E. Bertran

Book ID
108028180
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
402 KB
Volume
37-38
Category
Article
ISSN
0924-4247

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✍ Yue Kuo 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 400 KB

Plasma enhanced chemical vapor deposited (PECVD) silicon nitride (SiN x ) is the dominate gate dielectric material for the amorphous silicon (a-Si:H) thin film transistors (TFTs) today. In this paper, the author critically reviewed several major issues in this field. Two subjects are included in the