✦ LIBER ✦

Plasma-assisted epitaxial growth of GaAs and GaSb layers in hydrogen plasma

✍ Scribed by Matsushita, K.; Sato, T.; Sato, Y.; Sugiyama, Y.; Hariu, T.; Shibata, Y.

Book ID: 114594824
Publisher: IEEE
Year: 1984
Tongue: English
Weight: 526 KB
Volume: 31
Category: Article
ISSN: 0018-9383
DOI: 10.1109/t-ed.1984.21668

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Photoluminescence properties of GaSb epi

Photoluminescence properties of GaSb epitaxial layers passivated in hydrogen plasma

✍ Gladkov, P. 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 135 KB

## Abstract Undoped and Si‐doped GaSb layers grown by low pressure MOVPE have been treated in hydrogen plasma and the effect of this treatment on photoluminescent (PL) and electrical properties is presented. Hall‐effect and PL measurements reveal that hydrogenation leads to reduction in the concent

Plasma-assisted epitaxy of InAs layers o

Plasma-assisted epitaxy of InAs layers on GaAs

✍ Hideo Takei; Tomoji Hamada; Takashi Hariu 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 262 KB

Plasma-assisted deposition and epitaxy o

Plasma-assisted deposition and epitaxy of GaAs films

✍ T. Hariu; K. Takenaka; S. Shibuya; Y. Komatsu; Y. Shibata 📂 Article 📅 1981 🏛 Elsevier Science 🌐 English ⚖ 269 KB

Low-temperature cleaning of Si and growt

Low-temperature cleaning of Si and growth of GaAs on Si by hydrogen plasma-assisted metalorganic molecular-beam epitaxy

✍ Y. Kunitsugu; I. Suemune; Y. Tanaka; Y. Kan; M. Yamanishi 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 390 KB

Molecular beam epitaxial growth and char

Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (0 0 1) substrates

✍ Yanbo Li; Yang Zhang; Yuwei Zhang; Baoqiang Wang; Zhanping Zhu; Yiping Zeng 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 883 KB

Role of strain in growth kinetics of AlG

Role of strain in growth kinetics of AlGaN layers during plasma-assisted molecular beam epitaxy

✍ A.M. Mizerov; V.N. Jmerik; M.A. Yagovkina; S.I. Troshkov; P.S. Kop'ev; S.V. Ivan 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 758 KB

Comparative study of growth kinetics of the Al x Ga 1À x N (x¼0-1) layers grown by plasma-assisted molecular beam epitaxy (PA MBE) under different growth conditions (group III to activated nitrogen and Al to Ga flux ratios) is presented. The strong influence of elastic stress on the surface morpholo