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Plasma-assisted chemical vapor deposition and characterization of high quality silicon oxide films

โœ Scribed by S.V Nguyen; D Dobuzinsky; D Dopp; R Gleason; M Gibson; S Fridmann

Book ID
113204946
Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
691 KB
Volume
193-194
Category
Article
ISSN
0040-6090

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๐Ÿ“œ SIMILAR VOLUMES

Modeling of flame assisted chemical vapo
Modeling of flame assisted chemical vapor deposition of silicon films
โœ M. Masi; C. Cavallotti; E. Raffa ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 327 KB ๐Ÿ‘ 1 views

## Abstract The simulation of a flame assisted chemical vapor deposition (FACVD) process is here proposed with reference to the growth of silicon thin films through the silane/chlorosilanes/hydrogen/chlorine route. The goal is to design a reactor able to deposit micromorphous or multicrystalline fi