✦ LIBER ✦

Piezoelectric field measurements by photoreflectance in strained InGaAs/GaAs structures grown on polar substrates

✍ Scribed by P.D. Berger; C. Bru; Y. Baltagi; T. Benyattou; M. Berenguer; G. Guillot; X. Marcadet; J. Nagle

Book ID: 118350036
Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 478 KB
Volume: 26
Category: Article
ISSN: 0026-2692
DOI: 10.1016/0026-2692(95)00043-7

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Direct determination of the piezoelectri

Direct determination of the piezoelectric field in (111) strained InGaAs/GaAs multiple quantum well p-i-n structures by photoreflectance

✍ S.A. Dickey; A. Majerfeld; J.L. Sánchez-Rojas; A. Sacedón; E. Muñoz; A. Sanz-Her 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 99 KB

Piezoelectric fields in strained (In,Ga)

Piezoelectric fields in strained (In,Ga)As/GaAs multiple-quantum-well structures grown on vicinal (110) GaAs

✍ Sun, D.; Towe, E. 📂 Article 📅 1994 🏛 IEEE 🌐 English ⚖ 492 KB

Transport parameters in pseudomorphic an

Transport parameters in pseudomorphic and strain-relaxed InGaAs heterojunctions grown by MBE on misoriented (100) GaAs substrates

✍ J.M. Fernández; Jianhui Chen; H.H. Wieder 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 398 KB

Room temperature laser operation of stra

Room temperature laser operation of strained InGaAs∕GaAs QW structure monolithically grown by MOVCD on LE-PECVD Ge∕Si virtual substrate

✍ Chriqui, Y.; Saint-Girons, G.; Bouchoule, S.; Moison, J.-M.; Isella, G.; von Kae 📂 Article 📅 2003 🏛 The Institution of Electrical Engineers 🌐 English ⚖ 388 KB

Enhancement of the 2DEG density in AlGaA

Enhancement of the 2DEG density in AlGaAs/InGaAs/GaAs P-HEMTs structures grown by MBE on (311)A and (111)A GaAs substrates

✍ S. Rekaya; L. Sfaxi; L. Bouzaïene; H. Maaref; C. Bru-Chevallier 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 439 KB

The pseudomorphic high electron mobility transistor (P-HEMT) structure materials Al 0.33 Ga 0.7 As/In 0.1 Ga 0.9 As/GaAs have been grown by molecular beam epitaxy (MBE) on (311)A and (111)A GaAs substrates. The epitaxy of strain heterostructure on high index GaAs substrate has led to new growth phen

Magnitude and polarity of strain-induced

Magnitude and polarity of strain-induced fields in pseudomorphic In0.2Ga0.8As quantum well structures on (112) GaAs substrates

✍ D. Sun; R.H. Henderson; E. Towe 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 324 KB