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Magnitude and polarity of strain-induced fields in pseudomorphic In0.2Ga0.8As quantum well structures on (112) GaAs substrates

✍ Scribed by D. Sun; R.H. Henderson; E. Towe

Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 324 KB
Volume: 150
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(95)80257-d

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