Room temperature laser operation of strained InGaAs∕GaAs QW structure monolithically grown by MOVCD on LE-PECVD Ge∕Si virtual substrate

✍ Scribed by Chriqui, Y.; Saint-Girons, G.; Bouchoule, S.; Moison, J.-M.; Isella, G.; von Kaenel, H.; Sagnes, I.

• Book ID: 125899945
• Publisher: The Institution of Electrical Engineers
• Year: 2003
• Tongue: English
• Weight: 388 KB
• Volume: 39
• Category: Article
• ISSN: 0013-5194
• DOI: 10.1049/el:20030926