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Physiological and molecular changes in plants grown at low temperatures

✍ Scribed by Andreas Theocharis, Christophe Clément, Essaïd Ait Barka


Book ID
113042026
Publisher
Springer-Verlag
Year
2012
Tongue
English
Weight
467 KB
Volume
235
Category
Article
ISSN
0032-0935

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Point defects in III–V materials grown b
✍ P. Hautojärvi; J. Mäkinen; S. Palko; K. Saarinen; C. Corbel; L. Liszkay 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 676 KB

The present understanding of the point defects in GaAs and InP grown by molecular beam epitaxy at low temperature (LT) is briefly reviewed. New results on vacancies and ion-type acceptors obtained by positron annihilation are given. Depending on the growth temperature, Ga vacancies or small vacancy