We reviewed our recent progress in growth and optical properties of GaN-based quantum dots (QDs). After briefly discussing the impact of GaN-based QDs on the improvement of threshold current characteristics, we show the growth of InGaN/GaN self-assembled QDs with the average diameter of the QDs as s
Physically-based simulation of plant leaf growth
β Scribed by Iris R. Wang; Justin W. L. Wan; Gladimir V. G. Baranoski
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 255 KB
- Volume
- 15
- Category
- Article
- ISSN
- 1546-4261
- DOI
- 10.1002/cav.26
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β¦ Synopsis
Abstract
A mathematical model is presented to simulate the growth of a plant leaf. The tissue in the leaf has been regarded as a viscous, incompressible fluid whose 2D expansion comes from the nonβzero specific growth rate in area. The resulting system of equations are composed of the modified NavierβStokes equations. The level set method is used to capture the expanding leaf front. Numerical simulations indicate that different portions of the leaf expand at different rates, which is consistent with the biological observations in the growth of a plant leaf. Numerical results for the case of the Xanthium leaf growth are also presented. A standard ray tracing technique is applied to produce an animation simulating the leaf growth process of three days. The key results with their physical and practical implications are discussed. Copyright Β© 2004 John Wiley & Sons, Ltd.
π SIMILAR VOLUMES
This paper outlines a physically based model developed for prediction of both arid region Β―ash Β―oods and associated transmission loss. It is based on coupling numerical solutions of the St Venant equations and the kinematic wave equation for channel and overland Β―ow routing, respectively, with the R
## Book review PENNING DE VEXES, F. W. T., H. H. VAN LAAR (Eds.): S i m u l a t i o n of p l a n t g r o w t h a n d c r o p p r o d u c t i o n . Centre for Agricultural Publishing and Documentation, Wageningen 1982,320 pp., DM 25,-.