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Physically-based RF model for metal-oxide-metal capacitors

✍ Scribed by Geng, Chunqi; Chew, Kok Wai; Yeo, Kiat Seng; Do, Manh Anh; Ma, Jianguo; Chua, Chee Tee; Shao, Kai

Book ID
126476586
Publisher
The Institution of Electrical Engineers
Year
2000
Tongue
English
Weight
356 KB
Volume
36
Category
Article
ISSN
0013-5194

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## Abstract Novel 3D metal‐oxide‐metal capacitors for 60 GHz applications in a CMOS 45 nm process are proposed. Relatively high capacitances density of 3 fF/μm^2^ and quality factors from 3.2 to 10.2 at 60 GHz are measured. The study is validated up to 110 GHz for different capacitance values. © 20