Physical properties of TiN thin films
β Scribed by F. Marchetti; M. Dapor; S. Girardi; F. Giacomozzi; A. Cavalleri
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 350 KB
- Volume
- 115
- Category
- Article
- ISSN
- 0921-5093
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β¦ Synopsis
This" paper reports on the characterization of films of titanium nitride (TIN) obtained by reactive sputtering of titanium in a nitrogen-rich ambient (r.f. sputtering) and by nitrogen implantation during vapour deposition of titanium thin films.
In order to get a complete picture of the properties of the atoms in these systems the thin films were characterized with Auger electron spectroscopy and with a Seeman-Bohlin X-ray diffractometer. The overlayers were analysed by four-point probe to evaluate the resistivity.
The observed chemical and physical properties of the films strongly depend on both the growth technique and the particular parameters employed.
π SIMILAR VOLUMES
Thin films of several thicknesses in the form of MIM structures are prepared from the powders of tin oxide (SnO,) by thermal evaporation technique in a vacuum of Torr. The dielectric properties of tin oxide film capacitors have been studied with temperatures varying from 77 to 400 K and also with fr