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Physical properties of thin heteroepitaxial silicon films

✍ Scribed by J. Mercier


Publisher
Elsevier Science
Year
1971
Tongue
English
Weight
74 KB
Volume
9
Category
Article
ISSN
0022-0248

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## Abstract The influence of nitrogen on the internal structure and so on the electrical properties of silicon thin films obtained by low‐pressure chemical vapor deposition (LPCVD) was studied using several investigation methods. We found by using Raman spectroscopy and SEM observations that a stro