Physical properties of memory quality PECVD silicon nitride
โ Scribed by M. A. Khaliq; Q. A. Shams; W. D. Brown; H. A. Naseem
- Book ID
- 112812269
- Publisher
- Springer US
- Year
- 1988
- Tongue
- English
- Weight
- 433 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0361-5235
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
In this paper a neural network based technique has been developed to model a plasma enhanced chemical vapor deposition (PECVD) silicon nitride process. The study covers the range of normal input parameters used for PECVD silicon nitride ยฎlms. These ยฎlm compositions range from nitrogen-rich to silico
Amorphous Si-N films are synthesised from an NH,/SiH, gas mixture by plasma-enhanced chemical vapour deposition (PECVD) at fixed radio frequency (13.56 MHz) and total gas pressure (3424 Torr). The variable process parameters and their ranges are: (i) substrate temperature, 200-400 "C; (ii) RF power