Physical insight into the phenomenon of B clustering in Si at room temperature
β Scribed by Lucia Romano; Alberto Maria Piro; Salvatore Mirabella; Maria Grazia Grimaldi
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 228 KB
- Volume
- 257
- Category
- Article
- ISSN
- 0168-583X
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π SIMILAR VOLUMES
The electronic structure of a d-doped quantum well of B in Si is studied at room temperature in the case of high impurity concentration. The calculation is carried out self-consistently in the framework of the Hartree approximation. A model with three independent hole bands is considered. The energy
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