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Calculation of FeB pairing in p-Si at room temperature for low B-concentrations

โœ Scribed by E. Rotsaert; P. Clauws; E. Simoen; J. Vennik


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
192 KB
Volume
77
Category
Article
ISSN
0038-1098

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Analytical calculation of effective dens
โœ Zhang Wan-rong; Zeng Zheng; Luo Jin-sheng ๐Ÿ“‚ Article ๐Ÿ“… 1996 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 476 KB

In this paper, the effective densities of states for the conduction and valence bands, Nc and N,, the intrinsic carrier concentration ni and the ionized doping concentration in strained Si,\_,Ge, layers grown on (001) Si substrates are analytically calculated, and their temperature and Ge fraction d