Analytical calculation of effective dens
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Zhang Wan-rong; Zeng Zheng; Luo Jin-sheng
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Article
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1996
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Elsevier Science
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English
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In this paper, the effective densities of states for the conduction and valence bands, Nc and N,, the intrinsic carrier concentration ni and the ionized doping concentration in strained Si,\_,Ge, layers grown on (001) Si substrates are analytically calculated, and their temperature and Ge fraction d