✦ LIBER ✦

Physical and electrical properties of noncrystalline Al[sub 2]O[sub 3] prepared by remote plasma enhanced chemical vapor deposition

✍ Scribed by Johnson, Robert S.; Lucovsky, Gerald; Baumvol, Isreal

Book ID: 126875048
Publisher: AVS (American Vacuum Society)
Year: 2001
Tongue: English
Weight: 556 KB
Volume: 19
Category: Article
ISSN: 0734-2101
DOI: 10.1116/1.1379316

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Nanocrystalline p-type transparent Cu–Al

Nanocrystalline p-type transparent Cu–Al–O semiconductor prepared by chemical-vapor deposition with Cu(acac)[sub 2] and Al(acac)[sub 3] precursors

✍ Gong, Hao; Wang, Yue; Luo, Yi 📂 Article 📅 2000 🏛 American Institute of Physics 🌐 English ⚖ 343 KB

Structural and electrical properties of

Structural and electrical properties of low pressure metalorganic chemical vapor deposition grown Eu[sub 2]O[sub 3] films on Si(100)

✍ Singh, M. P.; Shalini, K.; Shivashankar, S. A.; Deepak, G. C.; Bhat, N. 📂 Article 📅 2006 🏛 American Institute of Physics 🌐 English ⚖ 313 KB

Single-crystal Pb(Zr[sub x]Ti[sub 1âx]

Single-crystal Pb(Zr[sub x]Ti[sub 1âx])O[sub 3] thin films prepared by metal-organic chemical vapor deposition: Systematic compositional variation of electronic and optical properties

✍ Foster, C. M.; Bai, G.-R.; Csencsits, R.; Vetrone, J.; Jammy, R.; Wills, L. A.; 📂 Article 📅 1997 🏛 American Institute of Physics 🌐 English ⚖ 735 KB

Effect of Fe-doping concentration on mic

Effect of Fe-doping concentration on microstructure, electrical, and magnetic properties of Pb(Zr[sub 0.5]Ti[sub 0.5])O[sub 3] thin films prepared by chemical solution deposition

✍ Bai, W.; Meng, X. J.; Lin, T.; Tian, L.; Jing, C. B.; Liu, W. J.; Ma, J. H.; Sun 📂 Article 📅 2009 🏛 American Institute of Physics 🌐 English ⚖ 856 KB

The effects of substrate and annealing a

The effects of substrate and annealing ambient on the electrical properties of Ta2O5 thin films prepared by plasma enhanced chemical vapor deposition

✍ Sun-Oo Kim; Hyeong Joon Kim 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 418 KB

SiO2 prepared by remote plasma-enhanced

SiO2 prepared by remote plasma-enhanced chemical vapor deposition using SiCl4 and O2 at substrate temperatures of less than 200 °C

✍ A. Ortiz; C. Falcony; M. Farias; L. Cota-Araiza; G. Soto 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 526 KB