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Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films

โœ Scribed by Callegari, A.; Cartier, E.; Gribelyuk, M.; Okorn-Schmidt, H. F.; Zabel, T.


Book ID
120482725
Publisher
American Institute of Physics
Year
2001
Tongue
English
Weight
718 KB
Volume
90
Category
Article
ISSN
0021-8979

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The paper reports on electrical and optical investigations performed on HfO 2 high-k films deposited by Metalorganic chemical vapor deposition (MOCVD). Spectroellipsometry investigations show the presence of a transition layer between HfO 2 and the silicon substrate, which can be optically modelled