Photovoltaic performance of polycrystalline thin film p-AgGaSe2/n-Zn0.5Cd0.5S heterojunctions

✍ Scribed by Y. Satyanarayana Murty; B. Srinivasulu Naidu; P. Jayarama Reddy

• Publisher: Elsevier Science
• Year: 1991
• Tongue: English
• Weight: 405 KB
• Volume: 8
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(91)90035-t

✦ Synopsis

Polycrystalline thin film p-AgGaSe2/n-Zno.sCd0.sS heterojunctions were fabricated and the currentvoltage, capacitance-voltage and spectral response characteristics were studied. The typical cell parameters obtained were Voc = 550 mV, J~c = 12 mA cm -2, FF = 0.57 and r/= 4.4% with an intensity of 85 mW cm-2 on an active area of 1 cm 2. The results are discussed in terms of material characteristics and junction formation.