Photothermal deflection studies of GaAs epitaxial layers
β Scribed by George, Nibu A. ;Vallabhan, C. P. G. ;Nampoori, V. P. N. ;Radhakrishnan, P.
- Book ID
- 115350231
- Publisher
- The Optical Society
- Year
- 2002
- Tongue
- English
- Weight
- 109 KB
- Volume
- 41
- Category
- Article
- ISSN
- 1559-128X
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In the present work the photoconductive response of low resistivity, n-type GaAs epitaxial layers is studied by experimentally monitoring the dependence of the photoconductive gain (PG) optoelectronic parameter upon incident photon flux and temperature. The characterized samples fall into three majo
## Abstract CuInTe~2~ thin films were deposited onto semiβinsulating (111)Aβoriented GaAs substrates by flash evaporation. Epitaxial growth was found in the substrate temperature range __T__~sub~ = 620 β¦ 790 K. Above 750 K a second phase was found besides the chalcopyrite phase. All epitaxial films