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Photoconductive response of GaAs epitaxial layers

✍ Scribed by E. A. Anagnostakis

Publisher
Springer
Year
1992
Tongue
English
Weight
375 KB
Volume
54
Category
Article
ISSN
1432-0630

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✦ Synopsis

In the present work the photoconductive response of low resistivity, n-type GaAs epitaxial layers is studied by experimentally monitoring the dependence of the photoconductive gain (PG) optoelectronic parameter upon incident photon flux and temperature. The characterized samples fall into three major categories: ion implanted (II) GaAs epilayers formed within undoped, semi-insulating GaAs substrates; GaAs epitaxial layers grown by liquid phase epitaxy (LPE) on Cr-doped, semi-insulating GaAs substrates; and ungated GaAs MESFETs.

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## Abstract CuInTe~2~ thin films were deposited onto semi‐insulating (111)A‐oriented GaAs substrates by flash evaporation. Epitaxial growth was found in the substrate temperature range __T__~sub~ = 620 … 790 K. Above 750 K a second phase was found besides the chalcopyrite phase. All epitaxial films