Epitaxial layers of CuInTe2 on GaAs

✍ Scribed by Doz. Dr. sc. H. Neumann; E. Nowak; Dr. B. Schumann; Dr. A. Tempel; Doz. Dr. sc. G. Kühn

• Publisher: John Wiley and Sons
• Year: 1980
• Tongue: English
• Weight: 529 KB
• Volume: 15
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.19800150110

✦ Synopsis

Abstract

CuInTe~2~ thin films were deposited onto semi‐insulating (111)A‐oriented GaAs substrates by flash evaporation. Epitaxial growth was found in the substrate temperature range T~sub~ = 620 … 790 K. Above 750 K a second phase was found besides the chalcopyrite phase. All epitaxial films were p‐type conducting and showed an increase of the hole concentration with rising substrate temperature above T~sub~ = 720 K. Three acceptor states with ionization energies of 350 … 500 meV, 135 … 150 meV, and of some 10^−3^ eV were found.