In the present work the photoconductive response of low resistivity, n-type GaAs epitaxial layers is studied by experimentally monitoring the dependence of the photoconductive gain (PG) optoelectronic parameter upon incident photon flux and temperature. The characterized samples fall into three majo
β¦ LIBER β¦
Photoconductive gain of semiconductor epitaxial layers
β Scribed by Anagnostakis, E. A.
- Publisher
- John Wiley and Sons
- Year
- 1991
- Tongue
- English
- Weight
- 304 KB
- Volume
- 127
- Category
- Article
- ISSN
- 0031-8965
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