𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Photostimulated epitaxy of II–VI and IV–VI layers

✍ Scribed by S.N. Maximovsky; I.P. Revocatova; M.A. Selezneva

Book ID
107789251
Publisher
Elsevier Science
Year
1981
Tongue
English
Weight
557 KB
Volume
52
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Stimulated emission of II–VI epitaxial l
Stimulated emission of II–VI epitaxial layers
✍ C. Klingshirn; H. Kalt; M. Umlauff; W. Petri; F.A. Majumder; S.V. Bogdanov; W. L 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 372 KB
Optoelectronics with II–VI and IV–VI com
Optoelectronics with II–VI and IV–VI compounds
✍ Y. Marfaing 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 668 KB

The specific applications in optoelectronics of II-VI and IV-VI semiconductors cover both the shortwavelength and IR ranges of the electromagnetic spectrum. This review first establishes the status of the small band gap II-VI and IV-VI materials, i.e. their fundamental properties, methods of growth,

Ultrahigh Vacuum Atomic Layer Epitaxy of
Ultrahigh Vacuum Atomic Layer Epitaxy of Ternary II-VI Semiconductor Compounds
✍ M. A. Herman; J. T. Sadowski 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 299 KB

A concise discussion concerning the UHV ALE growth of ternary II-VI compounds is presented in this paper. Simultaneous reflection mass spectrometry (REMS) and reflection high energy electron diffraction (RHEED) measurements of the surface kinetic and structural parameters, respectively, governing th