Ultrahigh Vacuum Atomic Layer Epitaxy of Ternary II-VI Semiconductor Compounds

✍ Scribed by M. A. Herman; J. T. Sadowski

• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 299 KB
• Volume: 34
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/(sici)1521-4079(199902)34:2<153::aid-crat153>3.0.co;2-5

✦ Synopsis

A concise discussion concerning the UHV ALE growth of ternary II-VI compounds is presented in this paper. Simultaneous reflection mass spectrometry (REMS) and reflection high energy electron diffraction (RHEED) measurements of the surface kinetic and structural parameters, respectively, governing the UHV ALE growth of Cd 1-x Zn x Te and Cd 1-x Mn x Te heteroepitaxial films are reported. In addition, a Monte-Carlo-based method for simulation of the UHV ALE process of CdTe (the modelcompound for this growth technique) has been used for investigation of the Cd cation's fluxes reflected from the growing epilayer surface in different phases of the ALE process. The Cd + ionrelated REMS signals measured during CdTe growth have been compared with the simulation results.