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Photoreflectance study of plasma-etched semi-insulating GaAs substrates treated

✍ Scribed by L. P. Avakyants; P. Yu. Bokov; A. T. Grigoriev; A. V. Chervyakov

Book ID
111501003
Publisher
Allerton Press Inc
Year
2008
Tongue
English
Weight
172 KB
Volume
72
Category
Article
ISSN
1062-8738

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Size-selective laser-induced etching of
Size-selective laser-induced etching of semi-insulating GaAs: Photoluminescence studies
✍ B. Joshi; S.S. Islam; H.S. Mavi; Vinita Kumari; T. Islam; A.K. Shukla; Harsh πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 725 KB

The size-selective laser-induced etching of semi-insulating GaAs /10 0S is carried out to create a porous structure by varying the laser beam exposure time. The etch-time dependent photoluminescence (PL) spectroscopy results show that a direct tuning of the size of the nanocrystallites has a limit a