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On-line detection and monitoring of plasma etch damage to semi-insulating GaAs

โœ Scribed by P.A.F. Herbert; M. Murtagh; P.V. Kelly; G.M. Crean; W.M. Kelly


Book ID
103598964
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
457 KB
Volume
21
Category
Article
ISSN
0167-9317

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It is shown that in undoped semi-insulating GaAs crystals grown under the stoichiometric conditions both correlated and anticorrelated dependences of the minority carrier lifetime T on the dislocation density Nd could be observed. The above-pointed effect is connected with a slight excess of Ga atom