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Photoreflectance spectroscopy of low-dimensional GaAs/AlGaAs structures

✍ Scribed by G. Sek; J. Misiewicz; T. S. Cheng

Publisher
John Wiley and Sons
Year
1997
Tongue
English
Weight
183 KB
Volume
7
Category
Article
ISSN
1616-301X

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✦ Synopsis

Results of room-temperature photore¯ectance measurements on three GaAsaAl 0X33 Ga 0X67 As multiquantum well (MQW) structures with three dierent widths of wells and on two GaAsaAl 0X33 Ga 0X67 As high-electron-mobility transistor (HEMT) structures are presented. Energy-gap-related transitions in GaAs and AlGaAs were observed. The Al content in AlGaAs was determined. MQW transition energies were determined using the ®rst derivative of a Gaussian pro®le of the measured resonances. In order to identify the transitions in the MQS, the experimentally observed energies were compared with results of the envelope function calculation method for a rectangular quantum well. The Franz±Keldysh oscillation (FKO) model was also used to determine the built-in electric ®eld in various parts of the investigated structures. The values of the electric ®elds allow us to hypothesise about the origin of these ®elds. *

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✍ K Jezierski; P Sitarek; J Misiewicz; M Panek; B Ściana; R Korbutowicz; M Tłaczał 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 406 KB

## Epitaxial layers of GaAs were grown by NlOCVD technique on St-GaAs substrates. Photoreflectance (PR) spectra were measured at room temperature for energies in the vicinity of the E0 critical point for p-type as well as n-type doped GaAs/SI-GaAs structures. Two experimental methods for the further