Photoreflectance spectroscopy of GaAs doping superlattices
β Scribed by Yinsheng Tang; Bingshen Wang; Desheng Jiang; Weihua Zhuang; Jiben Liang
- Publisher
- Elsevier Science
- Year
- 1987
- Tongue
- English
- Weight
- 243 KB
- Volume
- 63
- Category
- Article
- ISSN
- 0038-1098
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Optical properties of three GaAs doping superlattices (SLs) were studied by low and high temperature photoluminescence (PL) as well as inelastic light scattering. A new optically active transition has been observed at 1.48 eV and the high temperature behaviour of the main e-(Zn)h band has been studi
Results of room-temperature photoreΒ―ectance measurements on three GaAsaAl 0X33 Ga 0X67 As multiquantum well (MQW) structures with three dierent widths of wells and on two GaAsaAl 0X33 Ga 0X67 As high-electron-mobility transistor (HEMT) structures are presented. Energy-gap-related transitions in GaAs