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Qualification of OMVPE AlGaAs/GaAs HBT structures using nondestructive photoreflectance spectroscopy

✍ Scribed by N. Bottka; D.K. Gaskill; P.D. Wright; R.W. Kaliski; D.A. Williams


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
364 KB
Volume
107
Category
Article
ISSN
0022-0248

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Results of room-temperature photoreΒ―ectance measurements on three GaAsaAl 0X33 Ga 0X67 As multiquantum well (MQW) structures with three dierent widths of wells and on two GaAsaAl 0X33 Ga 0X67 As high-electron-mobility transistor (HEMT) structures are presented. Energy-gap-related transitions in GaAs