Photoreflectance spectroscopic study of self-interstitials in GaAs
β Scribed by H Nakanishi; K Wada
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 112 KB
- Volume
- 93
- Category
- Article
- ISSN
- 0038-1098
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We have performed a photoreflectance study of the above-barrier states in ( \(\mathrm{InAs})_{1} /(\mathrm{GaAs})_{m}\) strained-layer superlattices ( \(m=10\) and 30 monolayers) grown on a (001) GaAs substrate by molecular-beam epitaxy. We have clearly observed the optical transitions associated wi
## Abstract ZnSe/semiβinsulating GaAs interfaces were studied by observing photogenerated plasmonβLO (PPL) coupled modes by nonresonant microβRaman spectroscopy. The effect of the carriers generated by the focused laser beam was investigated for a series of different thicknesses of ZnSe epitaxial l