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Photoreflectance investigations of semiconductor device structures

✍ Scribed by J.A.N.T. Soares; D. Beliaev; R. Enderlein; L.M.R. Scolfaro; M. Saito; J.R. Leite


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
452 KB
Volume
35
Category
Article
ISSN
0921-5107

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Photoreflectance spectroscopy has been applied to investigate MBE grown GaAs/AIGaAs low dimension structures. The first is an HEMT type structure with buried IO periods of 2.5nm GaAs/2.5nm AlGaAs superlattice. Oscillation-like signals associated with this SL have been observed and analysed in terms

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## Epitaxial layers of GaAs were grown by NlOCVD technique on St-GaAs substrates. Photoreflectance (PR) spectra were measured at room temperature for energies in the vicinity of the E0 critical point for p-type as well as n-type doped GaAs/SI-GaAs structures. Two experimental methods for the further