Photoreflectance spectroscopy has been applied to investigate MBE grown GaAs/AIGaAs low dimension structures. The first is an HEMT type structure with buried IO periods of 2.5nm GaAs/2.5nm AlGaAs superlattice. Oscillation-like signals associated with this SL have been observed and analysed in terms
β¦ LIBER β¦
Photoreflectance investigations of semiconductor device structures
β Scribed by J.A.N.T. Soares; D. Beliaev; R. Enderlein; L.M.R. Scolfaro; M. Saito; J.R. Leite
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 452 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0921-5107
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Photoreflectance investigations of GaAsA
β
G SΘ©k; J Misiewicz; M Kaniewska; K RegiΕski; J Muszalski
π
Article
π
1997
π
Elsevier Science
π
English
β 412 KB
Photoreflectance Spectroscopy Investigat
β
T.J. Ochalski; B. Gil; T. Bretagnon; P. Lefebvre; N. Grandjean; J. Massies; M. L
π
Article
π
1999
π
John Wiley and Sons
π
English
β 160 KB
π 2 views
Theory of electroreflectance and photore
β
A. Hamnett; J. Gilman; R.A. Batchelor
π
Article
π
1992
π
Elsevier Science
π
English
β 783 KB
Surface and interface of GaAsSI-GaAs str
β
K Jezierski; P Sitarek; J Misiewicz; M Panek; B Εciana; R Korbutowicz; M TΕaczaΕ
π
Article
π
1997
π
Elsevier Science
π
English
β 406 KB
## Epitaxial layers of GaAs were grown by NlOCVD technique on St-GaAs substrates. Photoreflectance (PR) spectra were measured at room temperature for energies in the vicinity of the E0 critical point for p-type as well as n-type doped GaAs/SI-GaAs structures. Two experimental methods for the further
Investigation of numerical algorithms in
β
Akira Yoshii; Masaaki Tomizawa; Kiyoyuki Yokoyama
π
Article
π
1987
π
Elsevier Science
π
English
β 767 KB
Photoreflectance and photoluminescence i
β
D.Y. Lin; M.C. Wu; H.J. Lin; W.L. Chen
π
Article
π
2008
π
Elsevier Science
π
English
β 237 KB