β Scribed by Akira Yoshii; Masaaki Tomizawa; Kiyoyuki Yokoyama
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
This paper presents an analysis of the numerical algorithms used to model microwave semiconductor devices. A comparison is made of the relative merits and features of the more popular finite difference schemes. A new generalized Scharfetter-Gummel formulation is presented which is compatible with dr
Simulators of semiconductor devices have to solve systems of equations generated by the discretization of partial differential equations, which are the most time-consuming part of the simulation process. Therefore, the use of an effective method to solve these linear systems is essential. In this wo
Simulation results for a n+-n-n+ two-valley semiconductor device obtained by use of a shock capturing numerical agorithm are presented. The one-dimensional problem is modelled by two systems of Euler equations connected by their source terms, and the Poisson equation. The resulting system of seven e