𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Numerical algorithms for modelling microwave semiconductor devices

✍ Scribed by Eric A. B. Cole; Christopher M. Snowden

Publisher
John Wiley and Sons
Year
1995
Tongue
English
Weight
799 KB
Volume
8
Category
Article
ISSN
0894-3370

No coin nor oath required. For personal study only.

✦ Synopsis

This paper presents an analysis of the numerical algorithms used to model microwave semiconductor devices. A comparison is made of the relative merits and features of the more popular finite difference schemes. A new generalized Scharfetter-Gummel formulation is presented which is compatible with drift-diffusion and energy-transport formulations, and is suitable for implementing in two-dimensional simulations on personal computers. The treatment allows for fully degenerate semiconductors, but implementation for the nondegenerate situation is easily obtained as a special case. The convergence and stability properties of the generalized scheme are discussed. The simulation of a planar submicrometre gate length GaAs MESFET is

πŸ“œ SIMILAR VOLUMES

Numerical simulation of two-valley semic
Numerical simulation of two-valley semiconductor device model based on an ENO shock capturing algorithm
✍ Desanka RadunviΔ‡; Jovan RadunoviΔ‡ πŸ“‚ Article πŸ“… 1994 πŸ› John Wiley and Sons 🌐 English βš– 615 KB

Simulation results for a n+-n-n+ two-valley semiconductor device obtained by use of a shock capturing numerical agorithm are presented. The one-dimensional problem is modelled by two systems of Euler equations connected by their source terms, and the Poisson equation. The resulting system of seven e

An efficient preconditioning technique f
An efficient preconditioning technique for numerical simulation of hydrodynamic model semiconductor devices
✍ Geng Yang; Shaodi Wang; Ruchuan Wang πŸ“‚ Article πŸ“… 2003 πŸ› John Wiley and Sons 🌐 English βš– 192 KB

## Abstract We investigate the application of preconditioned generalized minimal residual (GMRES) algorithm to the equations of hydrodynamic model of semiconductor devices. An introduction to such a model is presented. We use finite‐element method __P__~1~‐__isoP__~2~ element to discretize the equa

Harmonic solution of semiconductor trans
Harmonic solution of semiconductor transport equations for microwave and millimetre-wave device modelling
✍ Gianluca Acciari; Giorgio Leuzzi; Franco Giannini πŸ“‚ Article πŸ“… 2003 πŸ› John Wiley and Sons 🌐 English βš– 591 KB

The hydrodynamic transport equations for charges in a semiconductor have been solved for a periodic excitation by means of a harmonic approach, in order to model microwave and millimetre-wave active devices. The solution is based on the expansion of physical variables in a Fourier series in the time

Study of parallel numerical methods for
Study of parallel numerical methods for semiconductor device simulation
✍ Natalia Seoane; Antonio J. GarcΓ­a-Loureiro πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 289 KB

Simulators of semiconductor devices have to solve systems of equations generated by the discretization of partial differential equations, which are the most time-consuming part of the simulation process. Therefore, the use of an effective method to solve these linear systems is essential. In this wo