## Abstract We discuss first hierarchical error estimates and a criterion for mesh refinement. Then we describe briefly the hydrodynamic model of semiconductor model. Based on artificial viscosity technique about electron velocity, we propose to solve a Poisson equation to obtain a correction about
An efficient preconditioning technique for numerical simulation of hydrodynamic model semiconductor devices
✍ Scribed by Geng Yang; Shaodi Wang; Ruchuan Wang
- Publisher
- John Wiley and Sons
- Year
- 2003
- Tongue
- English
- Volume
- 16
- Category
- Article
- ISSN
- 0894-3370
- DOI
- 10.1002/jnm.507
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✦ Synopsis
Abstract
We investigate the application of preconditioned generalized minimal residual (GMRES) algorithm to the equations of hydrodynamic model of semiconductor devices. An introduction to such a model is presented. We use finite‐element method P~1~‐isoP~2~ element to discretize the equations. A preconditioning technique is proposed. The CPU times are presented for n^+^‐n‐n^+^ diodes and 0.25 μm gate length Si MESFETs by using the preconditioned GMRES algorithm and the GMRES algorithm. The numerical results show that the preconditioning technique accelerates effectively the velocity of convergence. Copyright © 2003 John Wiley & Sons, Ltd.
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